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ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS =-30V; R DS(ON) =0.025 ; I D =-7.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
? Low on-resistance
? Fast switching speed
? Low threshold
? Low gate drive
? Low profile SOIC package
APPLICATIONS
? DC - DC converters
? Power management functions
? Disconnect switches
? Motor control
ORDERING INFORMATION
SO8
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXM66P03N8TA
ZXM66P03N8TC
7”
13 ”
12mm
12mm
500 units
2500 units
S
S
D
D
DEVICE MARKING
? ZXM
66P03
ISSUE 1 - JANUARY 2006
1
S
D
Top View
SEMICONDUCTORS
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相关代理商/技术参数
ZXM66P03N8TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC10A816DN8TC 制造商:Diodes Incorporated 功能描述:
ZXMC10A816N8 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:100V SO8 Complementary Dual enhancement mode MOSFET
ZXMC10A816N8TA 制造商:Diodes Incorporated 功能描述:MOSFET COMPLEMENTARY SOP-8L ROHS 0.5K - Tape and Reel
ZXMC10A816N8TC 功能描述:MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A16DN8 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A16DN8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A16DN8TA 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube